SIC MOSFET
Compared with traditional silicon devices, silicon carbide (SiC) devices are low-loss semiconductors due to their low on-resistance characteristics and excellent performance at high temperature, high frequency and high pressure. In addition, SiC allows designers to reduce the use of components, further reducing design complexity.
The low on-resistance characteristics of SiC components help to significantly reduce the energy consumption of equipment, thus facilitating the design of environmentally friendly products and systems that reduce CO2 emissions.
Application
- lBoost inverters
- lServer power supplies
- lSolar inverters
- Charger station
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Product Specifications
Voltage | Part No. | Package | VDSS (V) | ID（A） | Rdson_20V(mΩ) | Rdson_18V(mΩ) | Rdson_15V(mΩ) | Vth(V) | Product status | |||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MAX | MAX | TYP | MAX | TYP | MAX | TYP | MAX | MIN | TYP | MAX | ||||
1200V | BXW10M1K2H | TO-247 | 1200 | 10 | 320 | 380 | 390 | 460 | 530 | 640 | 2.5 | 4.5 | MP | |
BXW18M1K2H | TO-247 | 1200 | 18 | 190 | 228 | 215 | 258 | 295 | 355 | 2 | 4.5 | MP | ||
BXW60M1K2J | TO-247-4L | 1200 | 60 | 36 | 43 | 40 | 48 | 50 | 60 | 1.5 | 3 | MP | ||
1700V | BXW3M1K7H | TO-247 | 1700 | 3 | 1100 | 1320 | 1140 | 1370 | 1230 | 1480 | 2.5 | 4.5 | MP | |